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Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum conversion

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

《化学科学与工程前沿（英文）》 2020年 第14卷 第6期   页码 997-1005 doi: 10.1007/s11705-019-1906-0

摘要： Thin film solar cells have been proved the next generation photovoltaic devices due to their low cost, less material consumption and easy mass production. Among them, micro-crystalline Si and Ge based thin film solar cells have advantages of high efficiency and ultrathin absorber layers. Yet individual junction devices are limited in photoelectric conversion efficiency because of the restricted solar spectrum range for its specific absorber. In this work, we designed and simulated a multi-junction solar cell with its four sub-cells selectively absorbing the full solar spectrum including the ultraviolet, green, red as well as near infrared range, respectively. By tuning the Ge content, the record efficiency of 24.80% has been realized with the typical quadruple junction structure of a-Si:H/a-Si Ge :H/µc-Si:H/µc-Si Ge :H. To further reduce the material cost, thickness dependent device performances have been conducted. It can be found that the design of total thickness of 4 m is the optimal device design in balancing the thickness and the . While the design of ultrathin quadruple junction device with total thickness of 2 m is the optimized device design regarding cost and long-term stability with a little bit more reduction in . These results indicated that our solar cells combine the advantages of low cost and high stability. Our work may provide a general guidance rule of utilizing the full solar spectrum for developing high efficiency and ultrathin multi-junction solar cells.

关键词： thin films     solar cells     quadruple junction solar cell     amorphous silicon     silicon germanium alloy     quantum efficiency    

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云南省锗产业发展研究

雷霆,王少龙

《中国工程科学》 2007年 第9卷 第11期   页码 103-109

摘要：

锗是典型的分散元素，是除硅以外最重要的半导体材料，在红外光学、光纤通信、化学催化剂、太阳 能电池、生物医学、电子器件等各领域都有广泛的应用。地球上锗资源较贫乏，我国的锗储量居世界第一位。 云南省锗储量占全国储量的40％左右，并拥有红外光学技术研发的基础，对我国锗产业具有十分重要的意 义。文章具体分析了云南省锗产业发展的外部和内部环境，提出了云南省2006～2020年锗产业发展的方向 和总体目标，探讨了锗产业链、产品定位、产业布局、重点发展的项目和支撑体系。

关键词： 锗资源     锗产业     可持续发展     云南    

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Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

《环境科学与工程前沿（英文）》 2015年 第9卷 第5期   页码 905-911 doi: 10.1007/s11783-015-0786-x

摘要： The current study investigated the effects of nano-silicon (Si) and common Si on lead (Pb) toxicity, uptake, translocation, and accumulation in the rice cultivars Yangdao 6 and Yu 44 grown in soil containing two different Pb levels (500 mg·kg and 1000 mg·kg ). The results showed that Si application alleviated the toxic effects of Pb on rice growth. Under soil Pb treatments of 500 and 1000 mg·kg , the biomasses of plants supplied with common Si and nano-Si were 1.8%–5.2% and 3.3%–11.8% higher, respectively, than those of plants with no Si supply (control). Compared to the control, Pb concentrations in rice shoots supplied with common Si and nano-Si were reduced by 14.3%–31.4% and 27.6%–54.0%, respectively. Pb concentrations in rice grains treated with common Si and nano-Si decreased by 21.3%–40.9% and 38.6%–64.8%, respectively. Pb translocation factors (TFs) from roots to shoots decreased by 15.0%–29.3% and 25.6%–50.8%, respectively. The TFs from shoots to grains reduced by 8.3%–13.7% and 15.3%–21.1%, respectively, after Si application. The magnitudes of the effects observed on plants decreased in the following order: nano-Si treatment>common Si treatment and high-grain-Pb-accumulating cultivar (Yangdao 6)>low-grain-Pb-accumulating cultivar (Yu 44) and heavy Pb stress (1000 mg·kg )>moderate Pb stress (500 mg·kg )>no Pb treatment. The results of the study indicate that nano-Si is more efficient than common Si in ameliorating the toxic effects of Pb on rice growth, preventing Pb transfer from rice roots to aboveground parts, and blocking Pb accumulation in rice grains, especially in high-Pb-accumulating rice cultivars and in heavily Pb-polluted soils.

关键词： silicon (Si)     lead (Pb)     rice (Oryza sativa L.)     toxicity     accumulation    

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Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

《能源前沿（英文）》 2011年 第5卷 第3期   页码 305-312 doi: 10.1007/s11708-011-0155-9

摘要： A computer simulator with a global model of heat transfer during crystal growth of Si for solar cells is developed. The convective, conductive, and radiative heat transfers in the furnace are solved together in a coupled manner using the finite volume method. A three-dimensional (3D) global heat transfer model with 3D features is especially made suitable for any crystal growth, while the requirement for computer resources is kept permissible for engineering applications. A structured/unstructured combined mesh scheme is proposed to improve the efficiency and accuracy of the simulation. A dynamic model for the melt-crystal (mc) interface is developed to predict the phase interface behavior in a crystal growth process. Dynamic models for impurities and precipitates are also incorporated into the simulator. Applications of the computer simulator to Czochralski (CZ) growth processes and directional solidification processes of Si crystals for solar cells are introduced. Some typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process, the dynamic behaviors of the mc interface, and the transport and distributions of impurities and precipitates, such as oxygen, carbon, and SiC particles, are presented and discussed. The findings show the importance of computer modeling as an effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si material.

关键词： computer modeling     silicon     crystal growth     solar cells    

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A novel shape memory alloy actuated soft gripper imitated hand behavior

《机械工程前沿（英文）》 2022年 第17卷 第4期 doi: 10.1007/s11465-022-0700-8

摘要： The limited length shrinkage of shape memory alloy (SMA) wire seriously limits the motion range of SMA-based gripper. In this paper, a new soft finger without silicone gel was designed based on pre bent SMA wire, and the finger was back to its original shape by heating SMA wire, rather than relying only on heat exchange with the environment. Through imitating palm movement, a structure with adjustable spacing between fingers was made using SMA spring and rigid spring. The hook structure design at the fingertip can form self-locking to further improve the load capacity of gripper. Through the long thin rod model, the relationship of the initial pre bent angle on the bending angle and output force of the finger was analyzed. The stress-strain model of SMA spring was established for the selection of rigid spring. Three grasping modes were proposed to adapt to the weight of the objects. Through the test of the gripper, it was proved that the gripper had large bending amplitude, bending force, and response rate. The design provides a new idea for the lightweight design and convenient design of soft gripper based on SMA.

关键词： shape memory alloy (SMA)     pre bent     wire     gripper     grasping mode     lightweight    

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从硫化矿高酸浸出的硫酸锌溶液中萃取提锗全流程研究

包福毅,方军,朱大和,陈世明,黄华堂,李学全,刘韬,王侃,黄艳芬

《中国工程科学》 2001年 第3卷 第12期   页码 58-67

摘要：

研究在硫酸锌溶液中用萃取法提取锗，萃取剂为7815(氧肟酸)，稀释剂为磺化煤油，添加剂为T试剂，反萃剂为NaOH，原料液为云南会泽铅锌矿硫化锌高温、高酸、高铁浸出溶液；工艺就萃取体系的选择，金属的萃取平衡，工艺参数的确定，工艺流程的设计以及工艺流程的串级实验等进行了深入研究，取得了锗萃取率大于96%，反萃率大于97%，锗精矿含锗大于30%的结果。

关键词： 萃取     锗     7815     T试剂    

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Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

《机械工程前沿（英文）》 2021年 第16卷 第3期   页码 570-579 doi: 10.1007/s11465-021-0642-6

摘要： The interfacial wear between silicon and amorphous silica in water environment is critical in numerous applications. However, the understanding regarding the micro dynamic process is still unclear due to the limitations of apparatus. Herein, reactive force field simulations are utilized to study the interfacial process between silicon and amorphous silica in water environment, exploring the removal and damage mechanism caused by pressure, velocity, and humidity. Moreover, the reasons for high removal rate under high pressure and high velocity are elucidated from an atomic perspective. Simulation results show that the substrate is highly passivated under high humidity, and the passivation layer could alleviate the contact between the abrasive and the substrate, thus reducing the damage and wear. In addition to more Si-O-Si bridge bonds formed between the abrasive and the substrate, new removal pathways such as multibridge bonds and chain removal appear under high pressure, which cause higher removal rate and severer damage. At a higher velocity, the abrasive can induce extended tribochemical reactions and form more interfacial Si-O-Si bridge bonds, hence increasing removal rate. These results reveal the internal cause of the discrepancy in damage and removal rate under different conditions from an atomic level.

关键词： silicon     ReaxFF     molecular dynamics     friction     damage    

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Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

《机械工程前沿（英文）》 2007年 第2卷 第1期   页码 120-124 doi: 10.1007/s11465-007-0021-y

摘要： Light-weight high-silicon aluminum alloys are used for electronic packaging in the aviation and space-flight industry. Al-30Si and Al-40Si are fabricated with air-atomization and vacuum-canning hot-extrusion process. The density, thermal conductivity, hermeticity and thermal expansion coefficients of the material are measured, and the relationship between extrusion temperature and properties is obtained. Experimental results show that the density of high-silicon aluminum alloys prepared with this method is as high as 99.64% of the theory density, and increases with elevating extrusion temperature. At the same time, thermal conductivity varies between 104-140 W/(m " K); with the extrusion temperature, thermal expansion coefficient also increases but within 13?10 (at 100?C) and hermeticity of the material is high to 10 order of magnitude.

关键词： coefficient     hermeticity     temperature     relationship     air-atomization    

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硅及硅基半导体材料中杂质缺陷和表面的研究

屠海令

《中国工程科学》 2000年 第2卷 第1期   页码 7-17

摘要：

随着超大规模集成电路设计线宽向深亚微米级（＜0.5μm）和亚四分之一微米级（＜0.25μm）发展，对半导体硅片及其它硅基材料的质量要求越来越高，研究上述材料中各种杂质的行为，控制缺陷类型及数量，提高晶体完整性，降低表面污染和采用缺陷工程的方法改善材料质量显得尤为重要。文章阐述了深亚微米级和亚四分之一微米级集成电路用大直径硅材料中铁、铜金属和氧、氢、氮非金属杂质元素的行为，点缺陷及其衍生缺陷的本质与控制方法，硅片表面形貌、表面污染与检测方法的研究热点。同时还介绍了外延硅、锗硅及绝缘体上硅（SOI）等硅基材料的特性、制备及工艺技术发展趋势，展望了跨世纪期间硅及硅基材料产业发展的技术经济前景。

关键词： 硅片     硅外延片     锗硅     绝缘体上硅     杂质行为     缺陷控制     表面质量    

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Laser enhanced gettering of silicon substrates

Daniel CHEN,Matthew EDWARDS,Stuart WENHAM,Malcolm ABBOTT,Brett HALLAM

《能源前沿（英文）》 2017年 第11卷 第1期   页码 23-31 doi: 10.1007/s11708-016-0441-7

摘要： One challenge to the use of lightly-doped, high efficiency emitters on multicrystalline silicon wafers is the poor gettering efficiency of the diffusion processes used to fabricate them. With the photovoltaic industry highly reliant on heavily doped phosphorus diffusions as a source of gettering, the transition to selective emitter structures would require new alternative methods of impurity extraction. In this paper, a novel laser based method for gettering is investigated for its impact on commercially available silicon wafers used in the manufacturing of solar cells. Direct comparisons between laser enhanced gettering (LasEG) and lightly-doped emitter diffusion gettering demonstrate a 45% absolute improvement in bulk minority carrier lifetime when using the laser process. Although grain boundaries can be effective gettering sites in multicrystalline wafers, laser processing can substantially improve the performance of both grain boundary sites and intra-grain regions. This improvement is correlated with a factor of 6 further decrease in interstitial iron concentrations. The removal of such impurities from multicrystalline wafers using the laser process can result in intra-grain enhancements in implied open-circuit voltage of up to 40 mV. In instances where specific dopant profiles are required for a diffusion on one surface of a solar cell, and the diffusion process does not enable effective gettering, LasEG may enable improved gettering during the diffusion process.

关键词： gettering     multicystaline     silicon     impurities     laser doping    

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Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

《能源前沿（英文）》 2017年 第11卷 第1期   页码 1-3 doi: 10.1007/s11708-016-0436-4

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Numerical analysis of aluminum alloy reticulated shells with gusset joints under fire conditions

《结构与土木工程前沿（英文）》 2023年 第17卷 第3期   页码 448-466 doi: 10.1007/s11709-022-0910-5

摘要： In this study, a numerical analysis was conducted on aluminum alloy reticulated shells (AARSs) with gusset joints under fire conditions. First, a thermal-structural coupled analysis model of AARSs considering joint semi-rigidity was proposed and validated against room-temperature and fire tests. The proposed model can also be adopted to analyze the fire response of other reticulated structures with semi-rigid joints. Second, a parametric analysis was conducted based on the numerical model to explore the buckling behavior of K6 AARS with gusset joints under fire conditions. The results indicated that the span, height-to-span ratio, height of the supporting structure, and fire power influence the reduction factor of the buckling capacity of AARSs under fire conditions. In contrast, the reduction factor is independent of the number of element divisions, number of rings, span-to-thickness ratio, and support condition. Subsequently, practical design formulae for predicting the reduction factor of the buckling capacity of K6 AARSs were derived based on numerical analysis results and machine learning techniques to provide a rapid evaluation method. Finally, further numerical analyses were conducted to propose practical design suggestions, including the conditions of ignoring the ultimate bearing capacity analysis of K6 AARS and ignoring the radiative heat flux.

关键词： aluminum alloy reticulated shell     gusset joint     numerical analysis     fire resistance    

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Erratum to: Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated

《能源前沿（英文）》 2022年 第16卷 第5期   页码 876-877 doi: 10.1007/s11708-022-0832-x

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Effects of taping on grinding quality of silicon wafers in backgrinding

Zhigang DONG, Qian ZHANG, Haijun LIU, Renke KANG, Shang GAO

《机械工程前沿（英文）》 2021年 第16卷 第3期   页码 559-569 doi: 10.1007/s11465-020-0624-0

摘要： Taping is often used to protect patterned wafers and reduce fragmentation during backgrinding of silicon wafers. Grinding experiments using coarse and fine resin-bond diamond grinding wheels were performed on silicon wafers with tapes of different thicknesses to investigate the effects of taping on peak-to-valley (PV), surface roughness, and subsurface damage of silicon wafers after grinding. Results showed that taping in backgrinding could provide effective protection for ground wafers from breakage. However, the PV value, surface roughness, and subsurface damage of silicon wafers with taping deteriorated compared with those without taping although the deterioration extents were very limited. The PV value of silicon wafers with taping decreased with increasing mesh size of the grinding wheel and the final thickness. The surface roughness and subsurface damage of silicon wafers with taping decreased with increasing mesh size of grinding wheel but was not affected by removal thickness. We hope the experimental finding could help fully understand the role of taping in backgrinding.

关键词： taping     silicon wafer     backgrinding     subsurface damage     surface roughness    

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Ultraviolet exposure enhanced silicon direct bonding

Guanglan LIAO, Xuekun ZHANG, Xiaohui LIN, Canghai MA, Lei NIE, Tielin SHI,

《机械工程前沿（英文）》 2010年 第5卷 第1期   页码 87-92 doi: 10.1007/s11465-009-0078-x

摘要： Ultraviolet (UV) exposure, as an additional technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic silicon direct bonding. The effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied. It is found that the surface roughness of silicon wafers initially decreases and then increases with UV exposure time, and the bonding strength increases and then decreases accordingly. The correlations of annealing temperature and annealing time vs. bonding strength are experimentally explored. Results indicate that the bonding strength increases sharply then gently with increasing annealing temperature and annealing time using UV exposure. Besides, the reliability of silicon direct bonding with UV exposure enhancement after the high/low temperature cycle test, constant temperature and humidity test, vibration test and shock test is investigated. It follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases after the environmental tests, whereas the residual strength is still higher than that without UV exposure, and the variation trends of bonding strength vs. UV exposure time, annealing temperature and annealing time remain unchanged. Therefore, following the traditional wet chemical activation processes, appropriate UV exposure (about three minutes in this study) is effective and promising to enhance silicon direct bonding.

关键词： ultraviolet (UV) exposure     silicon direct bonding     bonding strength     reliability    

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标题 作者 时间 类型 操作

Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum conversion

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

期刊论文

云南省锗产业发展研究

雷霆,王少龙

期刊论文

Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

期刊论文

Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

期刊论文

A novel shape memory alloy actuated soft gripper imitated hand behavior

期刊论文

从硫化矿高酸浸出的硫酸锌溶液中萃取提锗全流程研究

包福毅,方军,朱大和,陈世明,黄华堂,李学全,刘韬,王侃,黄艳芬

期刊论文

Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

期刊论文

Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

期刊论文

硅及硅基半导体材料中杂质缺陷和表面的研究

屠海令

期刊论文

Laser enhanced gettering of silicon substrates

Daniel CHEN,Matthew EDWARDS,Stuart WENHAM,Malcolm ABBOTT,Brett HALLAM

期刊论文

Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

期刊论文

Numerical analysis of aluminum alloy reticulated shells with gusset joints under fire conditions

期刊论文

Erratum to: Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated

期刊论文

Effects of taping on grinding quality of silicon wafers in backgrinding

Zhigang DONG, Qian ZHANG, Haijun LIU, Renke KANG, Shang GAO

期刊论文

Ultraviolet exposure enhanced silicon direct bonding

Guanglan LIAO, Xuekun ZHANG, Xiaohui LIN, Canghai MA, Lei NIE, Tielin SHI,

期刊论文